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Same model may have multiple batches, images only for reference.
SPA08N80C3 Real Image
Same model may have multiple batches, images only for reference.

SPA08N80C3

Part No SPA08N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 8A TO220FP
Datasheet
SPA08N80C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 470μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 5.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 065907-SPA08N80C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPA08N80C3 CAD Model

Description

The Infineon Technologies 065907-SPA08N80C3 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 800V and a continuous drain current of 8A @ 25°C.

  • Maximum Power Dissipation: 40W (Tc)
  • Maximum Rds On: 650 mOhm @ Id,Vgs of 5.1A, 10V
  • Package: PG-TO220-FP
  • Mounting: Through-hole
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 60nC @ 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0416 $61.2480
70+ $1.6752 $117.2640
110+ $1.6229 $178.5190
150+ $1.5705 $235.5750
195+ $1.5181 $296.0295
255+ $1.3611 $347.0805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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