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Same model may have multiple batches, images only for reference.
SPA11N60C3IN Real Image
Same model may have multiple batches, images only for reference.

SPA11N60C3IN

Part No SPA11N60C3IN
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPA11N60C3IN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31
Package / Case TO-220-3 Full Pack
Base Product Number SPA11N
Other Names SP000013664,SPA11N60C3,SPA11N60C3INR,SPA11N60C3X,SPA11N60C3XTIN,SPA11N60C3XTIN
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278355-SPA11N60C3IN
Ultra Librarian 3D Model Ultra Librarian SPA11N60C3IN CAD Model

Description

The SPA11N60C3IN is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 11A @ Tc
  • On-Resistance: 380mOhm @ 7A and 10V
  • Package: TO-220-3 Full Pack
  • Power Dissipation: 33W @ Tc
  • Gate Charge: 60nC @ 10V
  • Input Capacitance: 1,200pF @ 25V
  • Temperature Range: -55°C to 150°C
  • Classification: EAR99
  • Mounting: Through-hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8219 $59.2599
50+ $2.3155 $115.7750
78+ $2.2432 $174.9696
107+ $2.1707 $232.2649
138+ $2.0984 $289.5792
185+ $1.8813 $348.0405
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Availability: 3,810 pieces
MOQ: 21 pcs
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