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Same model may have multiple batches, images only for reference.
SPA11N60CFD Real Image
Same model may have multiple batches, images only for reference.

SPA11N60CFD

Part No SPA11N60CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3
Datasheet
SPA11N60CFD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1.9mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 065909-SPA11N60CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA11N60CFD CAD Model

Description

The SPA11N60CFD is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 11A
  • Maximum Rds On: 440 mOhm @ 7A and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 5V @ 1.9mA
  • Power Dissipation: 33W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting: Through hole
  • Package: PG-TO220-3

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Quantity Unit Price Ext. Price
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90+ $1.1484 $103.3560
135+ $1.1125 $150.1875
190+ $1.0766 $204.5540
245+ $1.0407 $254.9715
325+ $0.9330 $303.2250
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