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Same model may have multiple batches, images only for reference.
SPA11N65C3 Real Image
Same model may have multiple batches, images only for reference.

SPA11N65C3

Part No SPA11N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO-220
Datasheet
SPA11N65C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 090193-SPA11N65C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SPA11N65C3
Introduction Date July 28, 2003
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SPA11N65C3 CAD Model

Description

The Infineon Technologies SPA11N65C3 is an N-channel MOSFET with a drain-source breakdown voltage of 650V.

  • Maximum Power Dissipation: 33W (Tc)
  • Continuous Drain Current @ 25°C: 11A (Tc)
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 7A, 10V
  • Category: Discrete semiconductor products
  • Popularity: High
  • Packaging: Tube/Rail
  • Mounting Style: Through-hole
  • Gate-Source Threshold Voltage: 3.9V @ 500μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V

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57+ $1.7672 $100.7304
88+ $1.7120 $150.6560
121+ $1.6567 $200.4607
157+ $1.6015 $251.4355
209+ $1.4358 $300.0822
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