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Same model may have multiple batches, images only for reference.
SPB100N03S2L03T Real Image
Same model may have multiple batches, images only for reference.

SPB100N03S2L03T

Part No SPB100N03S2L03T
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPB100N03S2L03T Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8180 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB100N
Other Names SP000013460
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 1278297-SPB100N03S2L03T
Ultra Librarian 3D Model Ultra Librarian SPB100N03S2L03T CAD Model

Description

The Infineon Technologies 1278297-SPB100N03S2L03T is an OptiMOS™ MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 100A (Tc)
  • Maximum Rds On: 2.7mOhm @ 80A, 10V
  • Maximum Gate Charge: 220 nC @ 10 V
  • Input Capacitance: 8180 pF @ 25 V
  • Maximum Vgs: ±20V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 175°C (TJ)

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