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SPB47N10

Part No SPB47N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 47A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 2mA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 2500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 117880-SPB47N10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPB47N10 CAD Model

Description

Infineon Technologies presents a high-performance MOSFET, the SPB47N10.

  • Polarity: N-channel
  • Maximum Power Dissipation: 175W (Tc)
  • Package: PG-TO263-3-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 47A (Tc) @ 25°C
  • Maximum Rds On: 33 mOhm @ 33A, 10V
  • Gate-Source Threshold Voltage: 4V @ 2mA
  • Maximum Voltage: ±20V
  • Maximum Input Capacitance: 2500pF @ 25V
  • Maximum Gate Charge: 105nC @ 10V
  • Category: discrete semiconductor products
  • Product Status: obsolete(EOL)
  • Supply: Limited

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