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Same model may have multiple batches, images only for reference.
SPB80N03S2L-03 G Real Image
Same model may have multiple batches, images only for reference.

SPB80N03S2L-03 G

Part No SPB80N03S2L-03 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPB80N03S2L-03 G Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8180 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SPB80N
Other Names SPB80N03S2L-03G,SPB80N03S2L03GXT,SPB80N03S2L-03 G,SP000200142
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
Win Source Part Number 1278299-SPB80N03S2L-03 G
Ultra Librarian 3D Model Ultra Librarian SPB80N03S2L-03 G CAD Model

Description

The Infineon Technologies 1278299-SPB80N03S2L-03 G is an N-channel MOSFET transistor designed for use in high power applications.

  • Maximum Drain to Source Voltage: 30V
  • Maximum Continuous Drain Current: 80A
  • On-State Resistance: 2.8mOhm @ 80A, 10V gate-source voltage
  • Gate Threshold Voltage: 2V @ 250uA
  • Package: TO-263-3, D2PAK

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