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Same model may have multiple batches, images only for reference.
SPB80N08S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPB80N08S2-07

Part No SPB80N08S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A D2PAK
Datasheet
SPB80N08S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 6130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 7.1 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101498-SPB80N08S2-07
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N08S2-07 CAD Model

Description

The SPB80N08S2-07 MOSFET from Infineon Technologies is a highly efficient N-channel power MOSFET that can dissipate up to 300W of power.

  • Designed for: Use in discrete semiconductor products
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current (25°C): 80A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 6130pF @ 25V
  • Maximum Rds On @ Id,Vgs: 7.1 mOhm @ 66A, 10V
  • Package: PG-TO263-3-2
  • Mounting: SMD (SMT)
  • Product Status: Obsolete (EOL)

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