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Same model may have multiple batches, images only for reference.
SPD02N60C3BTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD02N60C3BTMA1

Part No SPD02N60C3BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 1.8A DPAK
Datasheet
SPD02N60C3BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 80μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100521-SPD02N60C3BTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPD02N60C3BTMA1 CAD Model

Description

The Infineon Technologies SPD02N60C3BTMA1 is an N-channel MOSFET that is obsolete (EOL).

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 1.8A (Tc)
  • Polarity: N-channel
  • Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
  • Package: PG-TO252-3
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 25W (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 80μA
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
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290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
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