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SPD03N60C3

Part No SPD03N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 135μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 030751-SPD03N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Communications & Networking, Consumer Electronics, Power Management
Ultra Librarian 3D Model Ultra Librarian SPD03N60C3 CAD Model

Description

The Infineon Technologies MOSFET SPD03N60C3 is a high-popularity electronic component that is balanced in terms of supply and demand.

  • Polarity: N-channel
  • Maximum Power Dissipation: 38W (Tc)
  • Continuous Drain Current: 3.2A (Tc) @ 25°C
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PG-TO252-3
  • Common-Used Part: used in various applications such as industrial, communications and networking, consumer electronics, and power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0484 $62.9040
135+ $0.8602 $116.1270
210+ $0.8334 $175.0140
290+ $0.8066 $233.9140
375+ $0.7796 $292.3500
500+ $0.6990 $349.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,590 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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