The Infineon Technologies 107702-SPD04N50C3ATMA1 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 500V and a continuous drain current of 4.5A @ 25°C.

• Maximum Power Dissipation: 50W (Tc)
• Maximum Rds On: 950 mOhm @ Id,Vgs of 2.8A, 10V
• Suitable for: use in various applications such as power supplies, motor controls, and lighting.
• Package: PG-TO252-3-1 package with SMD (SMT) mounting
• Temperature Range: -55°C to 150°C (TJ)
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 22nC @ 10V
• Supply and Demand Status: balanced