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Same model may have multiple batches, images only for reference.
SPD04N60S5BTMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD04N60S5BTMA1

Part No SPD04N60S5BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.5A TO252
Datasheet
SPD04N60S5BTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 200μA
Max Gate Charge 22.9nC @ 10V
Max Input Capacitance 580pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109763-SPD04N60S5BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD04N60S5BTMA1 CAD Model

Description

The Infineon Technologies 109763-SPD04N60S5BTMA1 is a high-performance MOSFET designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 200μA
  • Maximum Gate Charge: 22.9nC @ 10V
  • Maximum Input Capacitance: 580pF @ 25V
  • Maximum Rds On at Id, Vgs: 950 mOhm @ 2.8A, 10V
  • Case/Package: PG-TO252-3, which is a TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 50W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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