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SPD04N80C3ATMA1

Part No SPD04N80C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 4A 3TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 240μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 570pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109445-SPD04N80C3ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD04N80C3ATMA1 CAD Model

Description

The Infineon Technologies MOSFET is an N-Channel device with a maximum power dissipation of 63W (Tc).

  • Supply and Demand Status: balanced
  • Component: designed for discrete semiconductor products
  • Mounting Technology: SMD (SMT) technology
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Win Source Part Number: 109445-SPD04N80C3ATMA1

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2178 $54.8010
90+ $1.1393 $102.5370
140+ $1.1000 $154.0000
200+ $1.0214 $204.2800
255+ $0.9821 $250.4355
320+ $0.9429 $301.7280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,550 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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