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Same model may have multiple batches, images only for reference.
SPD04P10PLGBTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPD04P10PLGBTMA1

Part No SPD04P10PLGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 4.2A TO252-3
Datasheet
SPD04P10PLGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 380μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 372pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115697-SPD04P10PLGBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD04P10PLGBTMA1 CAD Model

Description

The Infineon Technologies SPD04P10PLGBTMA1 is a MOSFET transistor with P-channel polarity.

  • Power Dissipation: 38W
  • Mounting Type: SMD (SMT)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On at Id,Vgs: 850 mOhm @ 3A, 10V

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Quantity Unit Price Ext. Price
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150+ $0.6717 $100.7550
235+ $0.6486 $152.4210
335+ $0.6022 $201.7370
435+ $0.5791 $251.9085
540+ $0.5559 $300.1860
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