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SPD06N60C3BTMA1

Part No SPD06N60C3BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.2A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 260μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 3.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 120668-SPD06N60C3BTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPD06N60C3BTMA1 CAD Model

Description

Introducing the Infineon Technologies SPD06N60C3BTMA1 MOSFET, a high-performance N-channel power semiconductor device designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 74W
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 6.2A @ 25°C
  • Gate-Source Threshold Voltage: 3.9V
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Rds On at Id,Vgs: 750 mOhm @ 3.9A, 10V
  • Package: PG-TO252-3
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6240 $53.0400
200+ $0.5120 $102.4000
305+ $0.4960 $151.2800
420+ $0.4800 $201.6000
540+ $0.4640 $250.5600
725+ $0.4160 $301.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,670 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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