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Same model may have multiple batches, images only for reference.
SPD08N50C3ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SPD08N50C3ATMA1

Part No SPD08N50C3ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7.6A DPAK
Datasheet
SPD08N50C3ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 350μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3-1
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 119994-SPD08N50C3ATMA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, LED Lighting
Ultra Librarian 3D Model Ultra Librarian SPD08N50C3ATMA1 CAD Model

Description

The Infineon Technologies SPD08N50C3ATMA1 MOSFET is a medium popularity N-Channel electronic component with a drain-source breakdown voltage of 500V.

  • Continuous Drain Current: 7.6A (Tc) @ 25°C
  • Maximum Gate Charge: 32nC @ 10V
  • Power Dissipation: 83W (Tc)
  • Package: reel - TR
  • Mounting Type: SMD (SMT) technology
  • Ideal for: use in power management and LED lighting applications.
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6592 $52.7360
185+ $0.5409 $100.0665
290+ $0.5240 $151.9600
395+ $0.5071 $200.3045
510+ $0.4902 $250.0020
685+ $0.4395 $301.0575
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Availability: 5,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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