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Same model may have multiple batches, images only for reference.
SPI70N10L Real Image
Same model may have multiple batches, images only for reference.

SPI70N10L

Part No SPI70N10L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI70N10L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series SIPMOS®
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4540 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI70N
Other Names SP000014005
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278269-SPI70N10L
Ultra Librarian 3D Model Ultra Librarian SPI70N10L CAD Model

Description

The SPI70N10L is an N-channel MOSFET transistor from Infineon Technologies.

  • Series: SIPMOS™
  • Drain to Source Voltage: 100 V
  • Continuous Drain Current @ 25°C: 70A (Tc)
  • Rds On (Max): 16mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
  • Power Dissipation: 250W (Tc)
  • Operating Temperature Range: -55°C ~ 175°C (TJ)
  • Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3-1

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