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Same model may have multiple batches, images only for reference.
SPP02N80C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP02N80C3XKSA1

Part No SPP02N80C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2A TO-220AB
Datasheet
SPP02N80C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 120μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 290pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 2.7 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1000074-SPP02N80C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP02N80C3XKSA1 CAD Model

Description

The Infineon Technologies SPP02N80C3XKSA1 is an N-Channel MOSFET technology discrete semiconductor product.

  • Manufacturer: Infineon Technologies
  • Technology: N-Channel MOSFET
  • Application: High power dissipation
  • Maximum Power Dissipation: 42W (Tc)
  • Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 2A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 120μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 290pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 2.7 Ohm @ 1.2A, 10V
  • Supply and Demand Status: Balanced

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70+ $1.4328 $100.2960
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2985 $253.2075
260+ $1.1642 $302.6920
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