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SPP06N60C3HKSA1

Part No SPP06N60C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
Power Dissipation (Max) 74W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP06N
Other Names SP000014697,SPP06N60C3IN,SPP06N60C3IN,SPP06N60C3XK,SPP06N60C3X,SPP06N60C3,SPP06N60C3
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278329-SPP06N60C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP06N60C3HKSA1 CAD Model

Description

The Infineon Technologies CoolMOS™ SPP06N60C3HKSA1 is a through-hole MOSFET transistor.

  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 6.2A
  • Maximum On-Resistance: 750mOhm @ 3.9A
  • Gate-Source Voltage: 3.9V @ 260µA
  • Power Dissipation: 74W
  • Temperature Range: -55°C to 150°C
  • Package: TO-220-3
  • Standard Package: 500

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5710 $62.8400
90+ $1.2891 $116.0190
140+ $1.2488 $174.8320
195+ $1.2086 $235.6770
250+ $1.1683 $292.0750
335+ $1.0474 $350.8790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,690 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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