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Same model may have multiple batches, images only for reference.
SPP07N60S5 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP07N60S5

Part No SPP07N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO220-3
Datasheet
SPP07N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 970 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP07N
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 339016-SPP07N60S5
Ultra Librarian 3D Model Ultra Librarian SPP07N60S5 CAD Model

Description

The SPP07N60S5 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Drain to Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id) @ 25°C: 7.3A
  • Rds On (Max): 600mOhm
  • Mounting: Through-hole
  • Package: TO-220-3
  • Gate Charge (Qg): 35nC
  • Input Capacitance (Ciss): 970pF
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2347 $67.0410
65+ $1.8337 $119.1905
100+ $1.7764 $177.6400
135+ $1.7191 $232.0785
175+ $1.6617 $290.7975
235+ $1.4899 $350.1265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
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