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SPP08P06PHXKSA1

Part No SPP08P06PHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 8.8A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 6.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 192415-SPP08P06PHXKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP08P06PHXKSA1 CAD Model

Description

The Infineon SPP08P06PHXKSA1 is a P-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 42W @ Tc
  • Continuous Drain Current @ 25°C: 8.8A
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 300 mOhm @ 6.2A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Maximum Input Capacitance: 420pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO-220-3
  • Mounting: Through hole technology
  • Applications: Power management, consumer electronics, and portable devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4920 $59.0400
290+ $0.4043 $117.2470
445+ $0.3915 $174.2175
610+ $0.3788 $231.0680
790+ $0.3661 $289.2190
1,060+ $0.3280 $347.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600,000 pieces
In Stock: 300,000 pieces Factory Stock: 300,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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