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Same model may have multiple batches, images only for reference.
SPP100N04S2-04 Real Image
Same model may have multiple batches, images only for reference.

SPP100N04S2-04

Part No SPP100N04S2-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO-220
Datasheet
SPP100N04S2-04 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 172nC @ 10V
Max Input Capacitance 7220pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1101618-SPP100N04S2-04
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP100N04S2-04 CAD Model

Description

The Infineon Technologies SPP100N04S2-04 is a MOSFET transistor that has an N-Channel polarity and can handle a power dissipation of up to 300W (Tc).

  • Polarity: N-Channel
  • Power Dissipation: 300W (Tc)
  • Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 172nC @ 10V
  • Maximum Input Capacitance: 7220pF @ 25V
  • Supply and Demand Status: Balanced

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