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Same model may have multiple batches, images only for reference.
SPP100N06S2-05 Real Image
Same model may have multiple batches, images only for reference.

SPP100N06S2-05

Part No SPP100N06S2-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO-220
Datasheet
SPP100N06S2-05 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065956-SPP100N06S2-05
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP100N06S2-05 CAD Model

Description

The Infineon Technologies SPP100N06S2-05 is a MOSFET transistor with a N-Channel polarity and a drain-source breakdown voltage of 55V.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 55V
  • Maximum Power Dissipation: 300W
  • Continuous Drain Current @ 25°C: 100A
  • Package: PG-TO220-3-1
  • Temperature Range: -55°C to 175°C
  • Popularity: Medium

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