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SPP10N80C3

Part No SPP10N80C3
Manufacturer Infineon Technologies
Catalog FETs - Single
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Infineon Technologies
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 192417-SPP10N80C3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP10N80C3 CAD Model

Description

The SPP10N80C3 is a high-voltage CoolMOS™ C3 Power MOSFET from Infineon Technologies. It is designed for use in a wide range of power electronics applications where high efficiency and reliability are crucial. This MOSFET utilizes Infineon's CoolMOS™ technology, known for its low on-resistance, reduced switching losses, and improved thermal performance compared to conventional MOSFETs.

Applications:

  • Switched-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC)
  • Lighting Ballasts
  • Industrial Power Supplies
  • Solar Inverters

Features:

  • CoolMOS™ C3 Technology: Provides significantly lower on-resistance and switching losses.
  • 800V Breakdown Voltage: Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • Low Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • Integrated Gate Resistor: Simplifies design and improves EMI performance.

Benefits:

  • High Efficiency: CoolMOS™ technology minimizes both conduction and switching losses, resulting in improved system efficiency.
  • Reduced Heat Dissipation: Lower losses translate to less heat generation, improving reliability and extending component life.
  • Simplified Design: Integrated gate resistor simplifies the gate drive circuitry and reduces component count.
  • Improved Reliability: Robust design and high avalanche capability provide increased reliability in demanding applications.
  • Cost-Effective Solution: High performance and reliability at a competitive price.

Additional Details:

The SPP10N80C3 is designed to offer exceptional performance in high-voltage power conversion applications. Its CoolMOS™ C3 technology ensures low on-resistance and minimized switching losses, contributing to high overall efficiency. The integrated gate resistor helps to improve EMI performance and simplify the design of the gate drive circuit. The device's high avalanche capability provides robustness against voltage transients, enhancing reliability. The specific datasheet should be consulted for detailed electrical characteristics, thermal performance data, and recommended operating conditions, including gate drive requirements and thermal management considerations. Available in a through-hole package.

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