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SPP11N60S5

Part No SPP11N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description LOW POWER_LEGACY
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Status Not For New Designs
Win Source Part Number 065958-SPP11N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP11N60S5 CAD Model

Description

The SPP11N60S5 is a Power MOSFET from Infineon Technologies, belonging to their CoolMOS™ S5 series. These MOSFETs are designed for high-efficiency switching applications, offering a combination of low on-resistance (RDS(on)) and low switching losses. This makes them suitable for a wide range of power electronics applications where efficiency and thermal performance are critical.

Applications:

  • Switched-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Lighting Applications (e.g., LED drivers)
  • Motor Control

Features:

  • CoolMOS™ S5 Technology: Provides superior performance compared to conventional MOSFETs.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • Low Gate Charge (Qg): Reduces switching losses, further enhancing efficiency.
  • 600V Breakdown Voltage: Suitable for high-voltage applications.
  • Integrated Body Diode: Offers fast and efficient reverse recovery.

Benefits:

  • High Efficiency: CoolMOS™ S5 technology and low RDS(on) minimize power dissipation, resulting in high overall system efficiency.
  • Improved Thermal Performance: Low losses lead to reduced heat generation, improving reliability and extending component life.
  • Simplified Design: Integrated features simplify the design process.
  • Increased Reliability: Robust design and high avalanche capability provide increased reliability in demanding applications.
  • Compact Footprint: Often available in space-saving packages.

Additional Details:

The SPP11N60S5 utilizes Infineon's CoolMOS™ S5 technology to achieve a balance between low on-resistance and fast switching speeds. Its integrated body diode provides fast and efficient reverse recovery, further improving efficiency. The device is typically available in a through-hole package. The datasheet should be consulted for detailed electrical characteristics, thermal performance data, and recommended operating conditions. This includes information on gate drive requirements, thermal management considerations, and safe operating area (SOA) limits. Designed for high-voltage, high-frequency switching applications, offering a cost-effective solution for improving efficiency and reducing heat generation in power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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