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SPP11N80C3

Part No SPP11N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 680μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 1600pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 7.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 088975-SPP11N80C3
Family Name SPP11N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPP11N80C3 CAD Model

Description

The Infineon Technologies SPP11N80C3 is an N-channel MOSFET transistor that is part of the SPP11N80C3 family.

  • Popularity: High
  • Maximum Power Dissipation: 156W
  • Continuous Drain Current @ 25°C: 11A
  • Maximum Rds On: 450 mOhm @ 7.1A and 10V
  • Gate Charge: 85nC @ 10V
  • Input Capacitance: 1600pF @ 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1201 $50.8824
58+ $1.7396 $100.8968
90+ $1.6852 $151.6680
123+ $1.6309 $200.6007
159+ $1.5765 $250.6635
213+ $1.4134 $301.0542
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,652 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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