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Same model may have multiple batches, images only for reference.
IRFB4228PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB4228PBF

Part No IRFB4228PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 83A TO-220AB
Datasheet
IRFB4228PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 4530pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 33A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046816-IRFB4228PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFB4228PBF CAD Model

Description

The Infineon Technologies IRFB4228PBF is an N-channel MOSFET transistor.

  • Maximum Power Dissipation: 330W @ Tc
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current (25°C): 83A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 107nC @ 10V
  • Maximum Input Capacitance: 4530pF @ 25V
  • Package: TO-220AB
  • Temperature Range: -40°C to 175°C
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3060 $59.5080
43+ $2.7126 $116.6418
66+ $2.6279 $173.4414
91+ $2.5431 $231.4221
118+ $2.4583 $290.0794
158+ $2.2040 $348.2320
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Availability: 1,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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