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Same model may have multiple batches, images only for reference.
SPP15N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPP15N60C3

Part No SPP15N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO-220
Datasheet
SPP15N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1660pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065961-SPP15N60C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP15N60C3 CAD Model

Description

The Infineon Technologies SPP15N60C3 MOSFET is a high-performance N-channel power MOSFET.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 15A
  • Maximum Power Dissipation: 156W
  • Applications: Industrial, communications and networking, consumer electronics, and power management
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 1660pF @ 25V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 9.4A, 10V
  • Package: PG-TO220-3-1
  • Dimensions: TO-220-3

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