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Same model may have multiple batches, images only for reference.
SPP20N60S5HKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPP20N60S5HKSA1

Part No SPP20N60S5HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description HIGH POWER_LEGACY / N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
Datasheet
SPP20N60S5HKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Discontinued
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP20N
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 761761-SPP20N60S5HKSA1
Ultra Librarian 3D Model Ultra Librarian SPP20N60S5HKSA1 CAD Model

Description

The 700142 is a CoolMOS™ series MOSFET IC manufactured by Infineon Technologies.

  • Transistor Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id) @ 25°C: 20A (Tc)
  • On-Resistance (Rds On): 190mOhm @ 13A, 10V
  • Power Dissipation (Max): 208W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220-3

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Quantity Unit Price Ext. Price
18+ $2.7882 $50.1876
39+ $2.6118 $101.8602
60+ $2.5235 $151.4100
86+ $2.3471 $201.8506
111+ $2.2588 $250.7268
139+ $2.1706 $301.7134
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Availability: 9,150 pieces
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