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Same model may have multiple batches, images only for reference.
SPP20N60S5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPP20N60S5XKSA1

Part No SPP20N60S5XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPP20N60S5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number SPP20N60
Other Names SP000681062
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278318-SPP20N60S5XKSA1
Ultra Librarian 3D Model Ultra Librarian SPP20N60S5XKSA1 CAD Model

Description

The Infineon Technologies 1278318-SPP20N60S5XKSA1 is an N-channel MOSFET that belongs to the CoolMOS™ series.

  • Maximum Drain-Source Voltage: 600V
  • Continuous Drain Current: 20A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 1mA
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: Not for new designs
  • Application: Transistors, FETs, and MOSFETs - single

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39+ $2.6118 $101.8602
60+ $2.5235 $151.4100
86+ $2.3471 $201.8506
111+ $2.2588 $250.7268
139+ $2.1706 $301.7134
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