The Infineon Technologies SPP21N50C3XKSA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 500V and continuous drain current of 21A @ 25°C. The SPP21N50C3XKSA1 is an N-Channel MOSFET from Infineon Technologies with a drain-source breakdown voltage of 500V and continuous drain current of 21A @ 25°C.

• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current: 21A @ 25°C
• Maximum Rds On: 190 mOhm @ 13.1A, 10V
• Package: PG-TO220-3-1
• Mounting: Through hole
• Power Dissipation: 208W (Tc)
• Drive Voltage: 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 3.9V @ 1mA
• Maximum Gate Charge: 95nC @ 10V
• Maximum Input Capacitance: 2400pF @ 25V