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Same model may have multiple batches, images only for reference.
SPP80N06S-08 Real Image
Same model may have multiple batches, images only for reference.

SPP80N06S-08

Part No SPP80N06S-08
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3660 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 239 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 675445-SPP80N06S-08
Ultra Librarian 3D Model Ultra Librarian SPP80N06S-08 CAD Model

Description

The 675445-SPP80N06S-08 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Compliance: AEC-Q101 (Automotive)
  • Drain to Source Voltage (Vdss): 55V
  • Current Rating: 80A
  • Rds On (Max): 8mOhm @ 80A and 10V
  • Gate Charge (Qg): 187nC @ 10V
  • Temperature Range: -55°C to 175°C
  • Package: TO-220-3
  • Mounting: Through-hole

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9+ $13.9732 $125.7588
13+ $13.5366 $175.9758
18+ $13.1000 $235.8000
23+ $12.6634 $291.2582
31+ $11.3537 $351.9647
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