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Same model may have multiple batches, images only for reference.
SPU09P06PL Real Image
Same model may have multiple batches, images only for reference.

SPU09P06PL

Part No SPU09P06PL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 9.7A TO-251
Datasheet
SPU09P06PL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 6.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1101650-SPU09P06PL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPU09P06PL CAD Model

Description

The Infineon Technologies SPU09P06PL is a P-channel MOSFET transistor that comes in a PG-TO251-3 package.

  • Manufacturer: Infineon Technologies
  • Product Name: SPU09P06PL
  • Type: P-channel MOSFET transistor
  • Package: PG-TO251-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 9.7A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 21nC @ 10V
  • Maximum Input Capacitance: 450pF @ 25V
  • Maximum Rds On @ Id,Vgs: 250 mOhm @ 6.8A, 10V
  • Category: Discrete Semiconductor Products
  • Mounting: Through hole technology
  • Power Dissipation: 42W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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