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Same model may have multiple batches, images only for reference.
SPW11N60S5 Real Image
Same model may have multiple batches, images only for reference.

SPW11N60S5

Part No SPW11N60S5
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-247
Datasheet
SPW11N60S5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 500μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 1460pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 065981-SPW11N60S5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW11N60S5 CAD Model

Description

The Infineon Technologies MOSFET 346411 is a N-channel power MOSFET with a drain-source breakdown voltage of 600V and a maximum Rds On @ Id,Vgs of 380 mOhm @ 7A, 10V.

  • Power Dissipation: 125W (Tc)
  • Operating Temperatures: -55°C to 150°C (TJ)
  • Package: PG-TO247-3
  • Mounting: Through-hole
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced

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48+ $2.4405 $117.1440
74+ $2.3643 $174.9582
101+ $2.2881 $231.0981
131+ $2.2118 $289.7458
175+ $1.9831 $347.0425
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Availability: 3,760 pieces
MOQ: 20 pcs
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