SPW15N60CFD

Part No SPW15N60CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13.4A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 065984-SPW15N60CFD
Popularity Medium
Supply and Demand Status Limited
Dimension TO-247-3
Case / Package PG-TO247-3
Mounting Through Hole
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 330 mOhm @ 9.4A, 10V
Power Dissipation (Max) 156W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 1820pF @ 25V
Max Gate Charge 84nC @ 10V
Gate-Source Threshold Voltage 5V @ 750μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 13.4A (Tc)
Drain-Source Breakdown Voltage 650V
Technology MOSFET
Polarity N-Channel
Status Not For New Designs
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products

Description

The Infineon Technologies SPW15N60CFD is a MOSFET transistor that is designed for various electronic applications. It is an N-Channel polarity transistor with a drain-source breakdown voltage of 650V, a continuous drain current of 13.4A (Tc), and a maximum Rds On at Id,Vgs of 330 mOhm @ 9.4A, 10V. The maximum gate-source voltage is ±20V, and the maximum gate charge is 84nC @ 10V. The transistor is packaged in a PG-TO247-3 case and has TO-247-3 dimensions. It has a power dissipation (max) of 156W (Tc) and can operate in a temperature range of -55°C to 150°C (TJ). The SPW15N60CFD is categorized as a discrete semiconductor product and is not for new designs.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
20+ $2.5360 $50.7200
49+ $2.0810 $101.9690
75+ $2.0160 $151.2000
103+ $1.9510 $200.9530
133+ $1.8860 $250.8380
178+ $1.6910 $300.9980
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 9,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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