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Same model may have multiple batches, images only for reference.
SPW16N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPW16N50C3

Part No SPW16N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 16A TO-247
Datasheet
SPW16N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 065985-SPW16N50C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW16N50C3 CAD Model

Description

The SPW16N50C3 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 160W @ Tc
  • Drain-Source Breakdown Voltage: 560V
  • Continuous Drain Current @ 25°C: 16A
  • Maximum Rds On @ Id, Vgs: 280 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Mounting: Through hole

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19+ $5.4338 $103.2422
29+ $5.2640 $152.6560
40+ $5.0942 $203.7680
51+ $4.9244 $251.1444
68+ $4.4150 $300.2200
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