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SPW17N80C3

Part No SPW17N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 17A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 2320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 088023-SPW17N80C3
Family Name SPW17N80C3
Introduction Date July 25, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW17N80C3 CAD Model

Description

The Infineon Technologies 088023-SPW17N80C3 is an N-channel MOSFET transistor designed for use in power management applications.

  • Power Dissipation: 227W
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 17A
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Maximum Rds On @ Id,Vgs: 290 mOhm @ 11A, 10V
  • Package: PG-TO247-3
  • Mounting: Through-hole
  • Popularity: High
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5726 $51.4520
48+ $2.1109 $101.3232
74+ $2.0449 $151.3226
102+ $1.9789 $201.8478
131+ $1.9130 $250.6030
175+ $1.7151 $300.1425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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