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Same model may have multiple batches, images only for reference.
SPW32N50C3 Real Image
Same model may have multiple batches, images only for reference.

SPW32N50C3

Part No SPW32N50C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 560V 32A TO-247
Datasheet
SPW32N50C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 560V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1.8mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 4200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 284W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 087362-SPW32N50C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW32N50C3 CAD Model

Description

The Infineon Technologies SPW32N50C3 MOSFET is a high-performance device that is ideal for a wide range of applications.

  • Popularity: High
  • Supply and Demand: Balance
  • Maximum Power Dissipation: 284W
  • Maximum Drain-Source Breakdown Voltage: 560V
  • Industries: Automotive, industrial, and telecommunications
  • Maximum Operating Temperature: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.0498 $60.2490
11+ $9.8871 $108.7581
16+ $9.5781 $153.2496
22+ $9.2691 $203.9202
28+ $8.9602 $250.8856
38+ $8.0332 $305.2616
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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