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Same model may have multiple batches, images only for reference.
SPW55N80C3 Real Image
Same model may have multiple batches, images only for reference.

SPW55N80C3

Part No SPW55N80C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 54.9A TO-247
Datasheet
SPW55N80C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 54.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 3.3mA
Max Gate Charge 288nC @ 10V
Max Input Capacitance 7520pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 32.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 212049-SPW55N80C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPW55N80C3 CAD Model

Description

The SPW55N80C3 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current @ 25°C: 54.9A
  • Maximum Rds On @ Id,Vgs: 85 mOhm @ 32.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.9V @ 3.3mA
  • Maximum Gate Charge: 288nC @ 10V
  • Maximum Input Capacitance: 7520pF @ 100V
  • Packaging: PG-TO247-3
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
7+ $7.5792 $53.0544
15+ $7.0903 $106.3545
22+ $6.8458 $150.6076
32+ $6.3568 $203.4176
41+ $6.1123 $250.6043
52+ $5.8678 $305.1256
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