The IS61C256AH-25N is a high-speed CMOS Static RAM (SRAM) manufactured by Integrated Silicon Solution, Inc. (ISSI). Designed for applications needing quick data access, this SRAM offers a good balance between speed and power consumption. Its 256Kbit density is often used for cache or buffer memory.

Applications

• Cache Memory for Microprocessors
• Buffer Memory in Communication Equipment
• Industrial Control Systems
• Networking Devices
• Embedded Systems

Features

• Capacity: 256 Kbit (32K x 8 bits)
• Access Time: 25 ns
• Supply Voltage: 5V
• Package: SOJ (Small Outline J-lead)
• Operating Temperature: -40°C to +85°C (Industrial Temperature Range)
• Low Power Consumption: CMOS technology for reduced power requirements

Benefits

• Fast Access Time: 25 ns access time enables quick data retrieval and storage.
• Low Power Consumption: CMOS design minimizes power consumption, extending battery life in portable devices.
• Easy Integration: SOJ package and 5V supply voltage simplify integration into existing systems.
• High Reliability: SRAM ensures reliable data storage and retrieval.

Additional Details

The IS61C256AH-25N operates at 5V and provides a fast access time of 25 nanoseconds. The SOJ package allows for surface mounting. The industrial temperature range makes this SRAM suitable for demanding environments. Refer to the official ISSI datasheet for precise operating conditions, power consumption details, and package dimensions. This component is often used where fast memory access and moderate storage capacity are required.