The AUIRFR3410TR is a discrete HEXFET® power MOSFET from International Rectifier (now Infineon Technologies). This MOSFET is designed to offer high efficiency and reliability in a variety of power switching applications.

Applications

• Synchronous rectification in isolated DC-DC converters.
• Motor control applications, including brushed DC motor drives.
• Uninterruptible Power Supplies (UPS).
• Power tools.
• Battery chargers.
• Class D audio amplifiers.

Features

• Advanced Process Technology: Provides optimized performance for efficient power switching.
• Ultra Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
• Dynamic dv/dt Rating: Ensures robust performance in demanding applications with high voltage and current slew rates.
• 175°C Operating Temperature: Allows for reliable operation in high-temperature environments.
• Fast Switching: Reduces switching losses and improves efficiency at higher frequencies.
• Repetitive Avalanche Rated: Offers increased ruggedness and reliability in applications with inductive loads.

Benefits

• Increased System Efficiency: Lower RDS(on) and fast switching reduce power losses, leading to higher efficiency and reduced heat generation.
• Reduced Component Count: High current capability can reduce the number of parallel MOSFETs required.
• Improved Thermal Performance: Allows for smaller heat sinks or fanless operation, reducing system size and cost.
• Enhanced System Reliability: Avalanche rating and high operating temperature contribute to robust and reliable operation.
• Simplified Design: Easy to implement in various power conversion topologies.

Additional Details

The AUIRFR3410TR is an N-channel MOSFET housed in a D-Pak (TO-252) package, making it suitable for surface mount assembly. Key specifications include a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of up to 63A (dependent on package and operating conditions), and a gate-source voltage (VGS) of ±20V. The RDS(on) is typically around 0.012 Ohms at a gate voltage of 10V. This MOSFET is designed for optimized efficiency in high-frequency switching applications and provides a robust and reliable solution for power management systems.