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IR1155S

Part No IR1155S
Manufacturer International Rectifier
Description PROGRAMMABLE FREQUENCY, ONE CYCLE CONTROL PFC IC
Sample
Rohs State rohs
ECAD Module
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Manufacturer INTERNATIONAL RECTIFIER
Win Source Part Number 1186504-IR1155S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IR1155S CAD Model

Description

The IR1155S is a high-voltage, high-speed power MOSFET and IGBT driver with floating channel designed for bootstrap operation. This driver is part of International Rectifier's extensive range of power management solutions, offering robust performance and reliability in demanding applications. It is specifically designed to drive N-channel MOSFETs and IGBTs in half-bridge configurations.

Applications

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • Induction heating
  • Lighting ballasts
  • Welding equipment

Features

  • Floating channel designed for bootstrap operation: Allows high-side gate drive with voltages up to 600V.
  • Gate drive supply range from 10V to 20V: Provides flexibility in power supply design.
  • High-speed operation: Enables efficient switching performance, minimizing switching losses.
  • Logic input compatible: Allows easy interface with microcontrollers and digital logic circuits.
  • CMOS Schmitt-triggered inputs with pull-down: Enhances noise immunity and prevents false triggering.
  • Under-voltage lockout (UVLO): Protects the power devices by disabling the gate drive when the supply voltage is too low.
  • Matched propagation delay for both channels: Ensures symmetrical switching performance and reduces dead-time requirements.
  • RoHS compliant: Meets environmental regulations.

Benefits

  • Improved system efficiency: High-speed switching reduces power losses, leading to better overall efficiency.
  • Enhanced system reliability: UVLO and other protection features prevent damage to power devices.
  • Simplified design: Integrated bootstrap functionality reduces external component count.
  • Increased power density: Allows for smaller and more compact power supply designs.
  • Reduced EMI: Controlled switching characteristics minimize electromagnetic interference.

Additional Details

The IR1155S features a robust design capable of driving high-power MOSFETs and IGBTs with high efficiency. Its integrated bootstrap diode and associated circuitry simplify the gate drive implementation. The device's advanced features, such as under-voltage lockout and matched propagation delays, ensure reliable operation and protect the power devices from damage. The device typically comes in a SO-8 package. This driver provides a cost-effective and high-performance solution for a wide range of power conversion applications. The operating temperature range is typically from -40°C to +125°C.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.2239 $63.6717
6+ $19.8806 $119.2836
8+ $19.2090 $153.6720
12+ $17.8657 $214.3884
15+ $17.1941 $257.9115
19+ $16.5224 $313.9256
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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