The IR2110ST is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is manufactured by International Rectifier (now Infineon Technologies). Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Applications

• Motor control
• Power supplies
• HID ballasts
• Class D audio amplifiers
• Induction heating

Features

• Floating channel designed for bootstrap operation to +600V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10V to 20V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Outputs in phase with inputs

Benefits

• Simplifies the design of high-voltage gate drive circuits.
• Provides robust and reliable operation in noisy environments.
• Offers flexibility in power supply design.
• Protects the MOSFET or IGBT from damage due to insufficient gate voltage.
• Ensures clean and accurate switching signals.
• Minimizes dead time and improves efficiency.

Additional Details

The IR2110ST is available in a surface-mount package. It has a typical propagation delay of 120ns. The driver can source and sink a peak current of 2A. The operating temperature range is -40°C to +125°C. It is compatible with various MOSFETs and IGBTs. The logic input is CMOS compatible. It requires external bootstrap capacitor for proper operation of the high-side driver.