The IRF7452QPBF is a 30V, single P-Channel HEXFET® power MOSFET from International Rectifier (now Infineon Technologies). It is designed for high-efficiency power switching applications. This device features a low on-resistance (RDS(on)) and low gate charge, making it suitable for use in DC-DC converters, load switches, and battery management systems. The IRF7452QPBF is RoHS compliant and comes in a standard SO-8 package.

Applications:

• DC-DC converters
• Load switches
• Battery management systems
• Power management in portable devices
• Motor control applications

Features:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free

Benefits:

• Increased efficiency in power conversion circuits
• Reduced power losses due to low on-resistance
• Improved reliability due to high operating temperature
• Faster switching speeds for high-frequency applications
• Robust performance under transient conditions
• Environmentally friendly

Additional Details:

The IRF7452QPBF offers a combination of low on-resistance and low gate charge, resulting in efficient switching performance and reduced power losses. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses. The device is designed to withstand high operating temperatures, ensuring reliable performance in demanding applications. Its fast switching speed makes it suitable for high-frequency DC-DC converters and other power switching applications. The dynamic dv/dt rating provides robustness against voltage transients. The device is avalanche rated, allowing it to withstand repetitive avalanche conditions up to the maximum junction temperature. The SO-8 package provides a compact footprint for space-constrained applications. It is used in a wide range of applications, including notebook computers, power supplies, and battery chargers. The device's key specifications include a drain-source voltage (Vds) of -30V, a gate-source voltage (Vgs) of ±20V, and a continuous drain current (Id) of -11A. The typical on-resistance (RDS(on)) at Vgs=-10V is 7.5 mΩ.