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Same model may have multiple batches, images only for reference.
IRG7PH28UD1PBF Real Image
Same model may have multiple batches, images only for reference.

IRG7PH28UD1PBF

Part No IRG7PH28UD1PBF
Manufacturer International Rectifier
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR GATE TRAS  /  IGBT Trench 1200 V 30 A 115 W Through Hole TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr International Rectifier
Package Bulk
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 100 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Power - Max 115 W
Switching Energy 543µJ (off)
Input Type Standard
Gate Charge 90 nC
Td (on/off) @ 25°C -/229ns
Test Condition 600V, 15A, 22Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AC
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Names INFIRFIRG7PH28UD1PBF,2156-IRG7PH28UD1PBF
Standard Package 1
Win Source Part Number 1214499-IRG7PH28UD1PBF
Ultra Librarian 3D Model Ultra Librarian IRG7PH28UD1PBF CAD Model

Description

The IRG7PH28UD1PBF is a discrete semiconductor product manufactured by International Rectifier.

  • Category: Transistors - IGBTs - Single
  • Power: 115W
  • IGBT Type: Trench
  • Voltage Collector Emitter Breakdown: 1200V
  • Current Collector: 30A
  • Current Collector Pulsed: 100A
  • Vce(on): 2.3V @ 15V, 15A
  • Switching Energy: 543µJ (off)
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: -/229ns
  • Mounting Type: Through Hole
  • Package/Case: TO-247-3
  • Temperature Range: -55°C ~ 150°C (TJ)
  • REACH Status: REACH Unaffected
  • HTSUS: 0000.00.0000

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