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IS61C3216B12T

Part No IS61C3216B12T
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1065809-IS61C3216B12T
Categories OEM Parts(F-I)
Manufacturer ISSI, Integrated Silicon Solution Inc
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IS61C3216B12T CAD Model

Description

The IS61C3216B12T is a high-speed, low-power CMOS Static RAM (SRAM) device manufactured by ISSI (Integrated Silicon Solution Inc.). It's organized as 128K x 16 bits, providing a total memory capacity of 2 Mbits. This SRAM is designed for applications requiring fast access times and low power consumption, such as cache memory and buffer memory in embedded systems and high-performance computing.

Applications:

  • Cache memory: Used as a high-speed cache memory in microprocessors and microcontrollers to reduce access times to frequently used data.
  • Buffer memory: Employed as a buffer memory in communication systems and data acquisition systems to temporarily store data during transmission or processing.
  • Embedded systems: Found in various embedded applications requiring fast memory access, such as industrial controllers, medical devices, and automotive systems.
  • Networking equipment: Used in routers, switches, and other networking devices for packet buffering and data storage.
  • Test and measurement equipment: Provides high-speed memory for capturing and storing data in oscilloscopes, logic analyzers, and other test instruments.

Features:

  • 128K x 16 organization: Provides 2 Mbits of memory capacity in a 16-bit wide configuration.
  • High-speed access time: 12 ns access time for rapid data retrieval.
  • Single 3.3V power supply: Simplifies power management and reduces power consumption.
  • Low power consumption: Minimizes energy consumption in both active and standby modes.
  • TTL compatible inputs and outputs: Ensures compatibility with standard logic circuits.
  • Automatic power-down feature: Reduces power consumption when the device is not actively being accessed.
  • Data retention voltage: Maintains data integrity even at low voltages.

Benefits:

  • Fast data access: Enables rapid data retrieval, improving overall system performance.
  • Low power consumption: Reduces energy consumption, making it suitable for portable and energy-efficient devices.
  • Simplified system design: Requires a single 3.3V power supply and offers TTL compatible I/O.
  • Reliable data storage: SRAM provides fast and reliable data storage with low latency.
  • Cost-effective solution: Offers a balance of performance, capacity, and cost for various applications.

Additional Details:

The IS61C3216B12T is typically packaged in a TSOP (Thin Small Outline Package) or SOJ (Small Outline J-lead) package for compact PCB mounting. The '12' indicates the access time in nanoseconds. The 'T' likely indicates the package type. It is designed to operate within a specified temperature range and adheres to industry standards for SRAM devices. This SRAM is particularly suitable for applications where speed and power efficiency are critical requirements.

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