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Same model may have multiple batches, images only for reference.
IXFA110N15T2 Real Image
Same model may have multiple batches, images only for reference.

IXFA110N15T2

Part No IXFA110N15T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 110A TO263 / N-Channel 150 V 110A (Tc) 480W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 25 V
Power Dissipation (Max) 480W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-263 (D2Pak)
Case / Package TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXFA110
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 238-IXFA110N15T2
Standard Package 50
Win Source Part Number 1324590-IXFA110N15T2
Ultra Librarian 3D Model Ultra Librarian IXFA110N15T2 CAD Model

Description

The IXFA110N15T2 MOSFET transistor from IXYS is a high-performance N-channel FET with a drain-to-source voltage of 150V and a continuous drain current of 110A at 25°C.

  • On-resistance: 13mOhm @ 55A and 10V
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 8600pF @ 25V
  • Package: TO-263 (D2Pak) package
  • Power Dissipation: 480W @ Tc
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Applications: power supplies, motor drives, and DC-DC converters

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56+ $5.3738 $300.9328
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