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IXFH10N100P

Part No IXFH10N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 10A TO-247AD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 6.5V @ 1mA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 3030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049353-IXFH10N100P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH10N100P CAD Model

Description

The IXFH10N100P is a N-Channel MOSFET manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 10A @ 25°C
  • Gate-Source Threshold Voltage: 6.5V @ 1mA
  • Maximum Gate Charge: 56nC @ 10V
  • Maximum Rds On at Id, Vgs: 1.4 Ohm @ 5A, 10V
  • Power Dissipation (max): 380W (Tc)
  • Temperature Range for Operation: -55°C to 150°C (TJ)
  • Packaging: Tube/Rail
  • Mounting: Through-Hole
  • Product Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.2181 $56.0905
11+ $9.2046 $101.2506
17+ $8.9169 $151.5873
24+ $8.6293 $207.1032
30+ $8.3417 $250.2510
41+ $7.4787 $306.6267
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Availability: 1,085 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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