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Same model may have multiple batches, images only for reference.
IXFH15N100 Real Image
Same model may have multiple batches, images only for reference.

IXFH15N100

Part No IXFH15N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 15A TO247AD
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Base Product Number IXFH15
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 876071-IXFH15N100
Ultra Librarian 3D Model Ultra Librarian IXFH15N100 CAD Model

Description

The 876071-IXFH15N100 is a high-performance N-Channel MOSFET designed for discrete semiconductor applications.

  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 15A @ 25°C
  • On-Resistance: 700mOhm @ 500mA and 10V
  • Package: TO-247-3
  • Gate Charge: 220nC @ 10V
  • Input Capacitance: 4500pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Product Line: Obsolete from IXYS

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Quantity Unit Price Ext. Price
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21+ $5.5174 $115.8654
33+ $5.3442 $176.3586
45+ $5.1721 $232.7445
58+ $5.0000 $290.0000
78+ $4.4826 $349.6428
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