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Same model may have multiple batches, images only for reference.
IXFH26N50 Real Image
Same model may have multiple batches, images only for reference.

IXFH26N50

Part No IXFH26N50
Manufacturer IXYS
Catalog FETs - Single
Description HiPerFET Power MOSFETs | MOSFET N-CH 500V 26A TO-247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 26A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 160nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4200pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AD (IXFH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level Not Applicable
Win Source Part Number 1191062-IXFH26N50
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IXFH26N50 CAD Model

Description

This is a MOSFET from IXYS with a Win Source Part Number of 1191062-IXFH26N50.

  • Mounting Style: Through-Hole
  • Manufacturer Package: TO-247-3
  • Vds - Drain-Source Breakdown Voltage: 500V
  • Id - Continuous Drain Current: 26A
  • Rds On (Maximum) @ Id, Vgs: 200mOhm @ 13A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Maximum) @ Vgs: 160nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 4200pF @ 25V
  • Power Dissipation (Maximum): 300W
  • Use: Used in power management and industrial applications
  • Supply and Demand Status: Limited

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